1. Latchup in CMOS technology : the problem and its cure
پدیدآورنده : Troutman, Ronald R.
موضوع : ، Metal oxide semiconductors, Complementary- Defects,، Metal oxide semiconductors, Complementary- Reliability
۲ نسخه از این کتاب در ۲ کتابخانه موجود است.
2. Nanoscale CMOS VLSI circuits :
پدیدآورنده : Sandip Kundu, Aswin Sreedhar
کتابخانه: Center and Library of Islamic Studies in European Languages (Qom)
موضوع : Integrated circuits-- Very large scale integration-- Design and construction,Metal oxide semiconductors, Complementary-- Design and construction,Nanoelectronics
رده :
TK7871
.
99
.
M44
K84
2010
3. Nanoscale CMOS VLSI circuits
پدیدآورنده : Sandip Kundu, Aswin Sreedhar
کتابخانه: Library of Urmia University of Technology (West Azarbaijan)
موضوع : Metal oxide semiconductors, Complementary- Design and construction,Integrated circuits- Very large scale integration- Design and construction,Nanoelectronics
رده :
TK
,
7871
.
99
,.
M44
,
K84
,
2010
4. Transient-induced latchup in CMOS integrated circuits /
پدیدآورنده : Ming-Dou Ker and Sheng-Fu Hsu
کتابخانه: Center and Library of Islamic Studies in European Languages (Qom)
موضوع : Metal oxide semiconductors, Complementary-- Defects,Metal oxide semiconductors, Complementary-- Reliability
رده :
TK7871
.
99
.
M44
K47
2009
5. Transient-induced latchup in CMOS integrated circuits
پدیدآورنده : / Ming-Dou Ker and Sheng-Fu Hsu
کتابخانه: Central Library, Center of Documentation and Supply of Scientific Resources (East Azarbaijan)
موضوع : Metal oxide semiconductors, Complementary, Defects,Metal oxide semiconductors, Complementary, Reliability
رده :
E-BOOK
